Infineon IPD060N03LG: 60V Dual N-Channel StrongIRFET Power MOSFET in a Space-Saving PG-TSDSON-10 Package

The relentless drive towards higher power density and miniaturization in modern electronics demands components that deliver robust performance without compromising on board space. Addressing this challenge head-on, the Infineon IPD060N03LG emerges as a superior solution, integrating two independent N-channel MOSFETs in an exceptionally compact PG-TSDSON-10 package. This device is engineered for applications where space is at a premium and electrical efficiency is paramount.

At the heart of this MOSFET's performance is its 60V drain-source voltage (VDS) rating, making it an ideal choice for a wide array of automotive, industrial, and consumer applications. These include load switching, motor control, and power management in systems such as advanced driver-assistance systems (ADAS), battery management systems (BMS), and compact DC-DC converters.

A key highlight of the IPD060N03LG is its exceptionally low typical on-state resistance (RDS(on)) of just 6.0 mΩ at 10 V. This ultra-low resistance is critical for minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and improved thermal performance. By dissipating less power as waste heat, designers can simplify thermal management solutions, further contributing to a smaller overall system footprint.

The PG-TSDSON-10 package is a significant enabler for miniaturization. Its small outline and dual-chip construction allow for a dramatic reduction in the required PCB area compared to using two discrete MOSFETs in larger packages. This integration is vital for modern, high-density circuit designs, enabling engineers to pack more functionality into increasingly constrained spaces without sacrificing performance or reliability.

Furthermore, the device incorporates Infineon's advanced StrongIRFET™ technology. This technology is optimized to provide an excellent balance of low switching losses and high avalanche ruggedness, ensuring robust operation in demanding environments. The combination of low gate charge and low effective output capacitance ensures efficient switching, which is crucial for high-frequency applications.

ICGOOFind: The Infineon IPD060N03LG represents a significant leap in power component integration. By combining dual 60V N-channel MOSFETs with an ultra-low RDS(on) in a space-saving PG-TSDSON-10 package, it delivers a potent combination of high efficiency, power density, and reliability for next-generation electronic designs.

Keywords: Power MOSFET, StrongIRFET, Low RDS(on), PG-TSDSON-10, Power Density.