Infineon IPP075N15N3G: High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this need, the Infineon IPP075N15N3G stands out as a benchmark in power MOSFET technology. As a member of Infineon's esteemed OptiMOS™ 5 family, this 150 V N-channel MOSFET is engineered to deliver exceptional performance in a wide array of power conversion applications, from server and telecom power supplies to industrial motor drives and solar inverters.

The cornerstone of the IPP075N15N3G's superiority is its exceptionally low figure-of-merit (FOM), which is the product of on-state resistance (R DS(on)) and gate charge (Q G). With a maximum R DS(on) of just 7.5 mΩ at 10 V, this device minimizes conduction losses, allowing more power to be delivered to the load with less energy wasted as heat. Simultaneously, its optimized gate charge ensures ultra-fast switching capabilities, which drastically reduces switching losses. This dual optimization is critical for high-frequency switching circuits, enabling designers to push the boundaries of efficiency while potentially reducing the size and cost of magnetic components and heat sinks.

Housed in a TO-220 package, the IPP075N15N3G offers a robust and thermally efficient platform. Its low thermal resistance ensures that heat is effectively transferred away from the silicon die, maintaining device reliability even under strenuous operating conditions. Furthermore, the OptiMOS™ 5 technology provides enhanced avalanche ruggedness and a body diode with excellent reverse recovery characteristics, contributing to higher system reliability and robustness against voltage spikes and stressful commutation events.

Designers will also appreciate the device's improved ESD robustness, simplifying handling during the manufacturing process and enhancing the long-term field reliability of the end product. By combining these performance attributes, the IPP075N15N3G enables the creation of power systems that are not only more efficient but also more compact and reliable, meeting the ever-increasing demands for energy savings and performance.

ICGOODFIND: The Infineon IPP075N15N3G is a top-tier OptiMOS™ 5 power MOSFET that sets a new standard for efficiency and performance in 150 V applications. Its industry-leading low R DS(on) and optimized dynamic characteristics make it an ideal choice for designers aiming to maximize power density and minimize energy losses in their next-generation power conversion systems.

Keywords: OptiMOS 5, Low R DS(on), High-Efficiency, Fast Switching, Power Density