Infineon IPA50R199CP: High-Performance 650V CoolMOS™ Power Transistor

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPA50R199CP stands out as a premier solution, embodying the advanced technology of Infineon’s CoolMOS™ CFD7 series. This 650V power transistor is engineered to meet the demanding requirements of modern switch-mode power supplies (SMPS), industrial drives, solar inverters, and other high-efficiency applications.

At the heart of the IPA50R199CP is its superjunction technology, which drastically reduces switching losses and enhances overall efficiency. With an ultra-low on-state resistance (RDS(on)) of just 199 mΩ, this MOSFET minimizes conduction losses, leading to cooler operation and higher power density in designs. The device’s optimized gate charge (Qg) ensures fast switching speeds, making it ideal for high-frequency operations where efficiency is critical.

One of the standout features of the IPA50R199CP is its integrated fast body diode, which provides excellent reverse recovery characteristics. This feature is particularly beneficial in applications like power factor correction (PFC) and bridge circuits, where hard commutation is common. The diode’s robust performance reduces electromagnetic interference (EMI) and improves system reliability.

Thermal management is another area where the IPA50R199CP excels. The TO-220 package offers low thermal resistance, enabling effective heat dissipation even under high-stress conditions. This allows designers to push the limits of power throughput without compromising on longevity or safety.

Furthermore, the device supports avalanche ruggedness, ensuring durability in unpredictable operating environments. Its high dv/dt capability and exceptional noise immunity make it a dependable choice for industrial and automotive applications where transient voltages are a concern.

In summary, the Infineon IPA50R199CP combines cutting-edge CoolMOS™ technology with practical enhancements to deliver top-tier performance. It enables designers to achieve higher efficiency, reduce system size, and enhance reliability across a wide range of power conversion applications.

ICGOOODFIND: The Infineon IPA50R199CP is a high-efficiency, robust 650V MOSFET that excels in switching performance, thermal management, and reliability, making it a top choice for next-generation power systems.

Keywords:

CoolMOS™,

High Efficiency,

Low RDS(on),

Fast Switching,

Avalanche Ruggedness